型号:

IRLR8103VTRLPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 30V 91A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRLR8103VTRLPBF PDF
标准包装 6,000
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 91A
开态Rds(最大)@ Id, Vgs @ 25° C 9 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 27nC @ 5V
输入电容 (Ciss) @ Vds 2672pF @ 16V
功率 - 最大 115W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 带卷 (TR)
相关参数
445A23G27M00000 CTS-Frequency Controls CRYSTAL 27.000000 MHZ 30PF SMD
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IRLR8103VTRPBF International Rectifier MOSFET N-CH 30V 91A DPAK
445A23G25M00000 CTS-Frequency Controls CRYSTAL 25.000000 MHZ 30PF SMD
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IRLR8103VTRPBF International Rectifier MOSFET N-CH 30V 91A DPAK
445A23G24M00000 CTS-Frequency Controls CRYSTAL 24.000000 MHZ 30PF SMD
IRLR8103VTRPBF International Rectifier MOSFET N-CH 30V 91A DPAK
445A23G20M00000 CTS-Frequency Controls CRYSTAL 20.000000 MHZ 30PF SMD
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